Type Designator: IRFB4110
Type of IRFB4110 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 370
Maximum drain-voltage source |Uds|, V: 100
Maximum gate-voltage source |Ugs|, V: 20
Maximum drain current |Id|, A: 180
Maximum junction temperature (Tj), °C:
Rise Time of IRFB4110 transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ом: 0.0045
Package: TO220AB
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